THBT15011 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
fabricante
THBT15011 Datasheet PDF : 11 Pages
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Test circuits
2
Test circuits
THBT15011, THBT20011, THBT27011
2.1
Test procedure for test circuit 1 for IBO and VBO parameters
Figure 4. Test circuit 1 for IBO and VBO parameters
K
ton = 20ms
R1 = 140Ω
220V 50Hz
Vout
R2 = 240Ω
DUT
VBO
measurement
1/4
IBO
measurement
Pulse test duration (tp = 20 ms):
● For bidirectional devices switch K is closed.
● For unidirectional devices switch K is open.
VOUT selection:
● For device with VBO < 200 V, VOUT = 250 VRMS, R1 = 140 Ω.
● For device with VBO ≥ 200 V, VOUT = 480 VRMS, R2 = 240 Ω.
2.2
Test procedure for test circuit 2 for dynamic IH parameter
Figure 5. Test circuit 2 for dynamic IH parameter
R
Surge generator
VBAT = - 48 V
D.U.T
This is a go no-go test, which can confirm the holding current (IH) level.
Procedure
1. Adjust the current level at the IH value by short circuiting the AK of the D.U.T.
2. Fire the D.U.T. with a surge current IPP = 10A, 10/1000µs.
3. The D.U.T. will come back off-state within 50 ms maximum.
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Doc ID 3767 Rev 9
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