TC74AC374F Ver la hoja de datos (PDF) - Toshiba

Número de pieza

componentes Descripción

fabricante

TC74AC374F

CMOS Digital Integrated Circuit Silicon Monolithic

Toshiba 

TC74AC374P/F/FT,534P/F

Electrical Characteristics

DC Characteristics

Characteristics

Symbol

High-level input

voltage

VIH

Test Condition

⎯

Ta = 25°C

Ta = −40 to

85°C

Unit

VCC

(V)

Min

Typ.

Max

Min

Max

2.0 1.50 ⎯

⎯ 1.50 ⎯

3.0 2.10 ⎯

⎯ 2.10 ⎯

V

5.5 3.85 ⎯

⎯ 3.85 ⎯

Low-level input

voltage

VIL

2.0 ⎯

⎯ 0.50 ⎯ 0.50

⎯

3.0 ⎯

⎯

0.90 ⎯

0.90

V

5.5 ⎯

⎯ 1.65 ⎯ 1.65

High-level output

voltage

2.0 1.9 2.0

⎯

1.9

⎯

VOH

IOH = −50 μA

VIN

= VIH or

VIL

IOH = −4 mA

IOH = −24 mA

3.0 2.9 3.0

⎯

2.9

⎯

4.5 4.4 4.5

⎯

4.4

⎯

V

3.0 2.58 ⎯

⎯ 2.48 ⎯

4.5 3.94 ⎯

⎯ 3.80 ⎯

IOH = −75 mA (Note) 5.5 ⎯

⎯

⎯ 3.85 ⎯

2.0 ⎯

0.0 0.1

⎯

0.1

Low-level output

voltage

3-state output

off-state current

Input leakage

current

IOL = 50 μA

VIN

VOL

= VIH or

VIL

IOL = 12 mA

3.0 ⎯

0.0 0.1

⎯

0.1

4.5 ⎯

0.0 0.1

⎯

0.1

V

3.0 ⎯

⎯ 0.36 ⎯ 0.44

IOL = 24 mA

4.5 ⎯

⎯ 0.36 ⎯ 0.44

IOL = 75 mA (Note) 5.5 ⎯

⎯

⎯

⎯ 1.65

VIN = VIH or VIL

IOZ

VOUT = VCC or GND

5.5 ⎯

⎯ ±0.5 ⎯ ±5.0 μA

IIN

VIN = VCC or GND

5.5 ⎯

⎯ ±0.1 ⎯ ±1.0 μA

Quiescent supply

current

ICC

VIN = VCC or GND

5.5 ⎯

⎯

8.0

⎯ 80.0 μA

Note:

This spec indicates the capability of driving 50 Ω transmission lines.

One output should be tested at a time for a 10 ms maximum duration.

5

2007-10-01

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