SUB85N04-03 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
fabricante
SUB85N04-03 Datasheet PDF : 5 Pages
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SUP/SUB85N04-03
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
100
1.6
VGS = 10 V
ID = 30 A
Source-Drain Diode Forward Voltage
1.2
TJ = 150_C
10
TJ = 25_C
0.8
0.4
0
–50 –25 0
25 50 75 100 125 150 175
TJ – Junction Temperature (_C)
1
0
0.3
0.6
0.9
1.2
VSD – Source-to-Drain Voltage (V)
Avalanche Current vs. Time
1000
100
IAV (A) @ TA = 25_C
10
IAV (A) @ TA = 150_C
1
0.1
0.00001 0.0001 0.001 0.01
0.1
1
tin (Sec)
Drain Source Breakdown vs.
Junction Temperature
60
54
ID = 250 mA
48
42
36
30
–50 –25 0
25 50 75 100 125 150 175
TJ – Junction Temperature (_C)
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 71124
S-00654—Rev. B, 27-Mar-00
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