STS9NF30L Ver la hoja de datos (PDF) - STMicroelectronics
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STS9NF30L Datasheet PDF : 6 Pages
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STS9NF30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 15 V
ID = 4.5 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, see fig.3)
VDD = 24 V ID = 9 A VGS = 4.5 V
Min.
Typ.
15
78
Max.
9
12
3
5
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
td(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 15 V ID = 4.5 A
RG = 4.7 Ω VGS = 4.5 V
(Resistive Load, see fig.3)
Min.
Typ.
38
23
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
VSD (∗) Forward On Voltage
ISD = 9 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 9 A di/ dt = 100 A/µs
Vr = 15 V Tj = 150 oC
(see test circuit, fig.5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
9
36
Unit
A
A
1.5
V
50
ns
80
nC
2
A
3/6
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