STK14C88-NF35U
HSB OPERATION
The STK14C88-NF35U provides the HSB pin for
controlling and acknowledging the STORE opera-
tions. The HSB pin can be used to request a hard-
ware STORE cycle. When the HSB pin is driven low,
the STK14C88-NF35U will conditionally initiate a
STORE operation after tDELAY; an actual STORE cycle
will only begin if a WRITE to the SRAM took place
since the last STORE or RECALL cycle. The HSB pin
has a very resistive pullup and is internally driven
low to indicate a busy condition while the STORE
(initiated by any means) is in progress. Pull up this
pin with an external 10K ohm resistor to VCAP if HSB
is used as a driver.
SRAM READ and WRITE operations that are in
progress when HSB is driven low by any means are
given time to complete before the STORE operation
is initiated. After HSB goes low, the STK14C88-
NF35U will continue SRAM operations for tDELAY. Dur-
ing tDELAY, multiple SRAM READ operations may take
place. If a WRITE is in progress when HSB is pulled
low it will be allowed a time, tDELAY, to complete. How-
ever, any SRAM WRITE cycles requested after HSB
goes low will be inhibited until HSB returns high.
The VCAP pins from the other STK14C88-NF35U
parts can be tied together and share a single capac-
itor. The capacitor size must be scaled by the num-
ber of devices connected to it. It is essential that all
parts have written to the SRAM for this STORE to
execute properly.
During any STORE operation, regardless of how it
was initiated, the STK14C88-NF35U will continue to
drive the HSB pin low, releasing it only when the
STORE is complete. Upon completion of the STORE
operation the STK14C88-NF35U will remain dis-
abled until the HSB pin returns high.
If HSB is not used, it should be left unconnected.
terns are typically repeating patterns of AA, 55,
00, FF, A5, or 5A. End product’s firmware should
not assume an NV array is in a set programmed
state. Routines that check memory content val-
ues to determine first time system configuration,
cold or warm boot status, etc. should always pro-
gram a unique NV pattern (e.g., complex 4-byte
pattern of 46 E6 49 53 hex or more random
bytes) as part of the final system manufacturing
test to ensure these system routines work consis-
tently.
• Power up boot firmware routines should rewrite
the nvSRAM into the desired state (autostore
enabled, etc.). While the nvSRAM is shipped in a
preset state, best practice is to again rewrite the
nvSRAM into the desired state as a safeguard
against events that might flip the bit inadvertently
(program bugs, incoming inspection routines,
etc.).
• The Vcap value specified in this datasheet
includes a minimum and a maximum value size.
Best practice is to meet this requirement and not
exceed the max Vcap value because the nvSRAM
internal algorithm calculates Vcap charge time
based on this max Vcap value. Customers that
want to use a larger Vcap value to make sure
there is extra store charge and store time should
discuss their Vcap size selection with Simtek to
understand any impact on the Vcap voltage level
at the end of a tRECALL period.
BEST PRACTICES
nvSRAM products have been used effectively for
over 15 years. While ease-of-use is one of the prod-
uct’s main system values, experience gained work-
ing with hundreds of applications has resulted in the
following suggestions as best practices:
• The non-volatile cells in an nvSRAM are pro-
grammed on the test floor during final test and
quality assurance. Incoming inspection routines
at customer or contract manufacturer’s sites will
sometimes reprogram these values. Final NV pat-
Document Control #ML0066 Rev 2.0
11
Feb, 2008