STK14C88-3
HSB OPERATION
The STK14C88-3 provides the HSB pin for control-
ling and acknowledging the STORE operations. The
HSB pin can be used to request a hardware STORE
cycle. When the HSB pin is driven low, the
STK14C88-3 will conditionally initiate a STORE oper-
ation after tDELAY; an actual STORE cycle will only
begin if a WRITE to the SRAM took place since the
last STORE or RECALL cycle. The HSB pin has a
very resistive pullup and is internally driven low to
indicate a busy condition while the STORE (initiated
by any means) is in progress. Pull up this pin with an
external 10K ohm resistor to VCAP if HSB is used as
a driver.
SRAM READ and WRITE operations that are in
progress when HSB is driven low by any means are
given time to complete before the STORE operation
is initiated. After HSB goes low, the STK14C88-3
will continue SRAM operations for tDELAY. During tDELAY,
multiple SRAM READ operations may take place. If a
WRITE is in progress when HSB is pulled low it will
be allowed a time, tDELAY, to complete. However, any
SRAM WRITE cycles requested after HSB goes low
will be inhibited until HSB returns high.
The HSB pin can be used to synchronize multiple
STK14C88-3s while using a single larger capacitor.
To operate in this mode the HSB pin should be con-
nected together to the HSB pins from the other
STK14C88-3s. An external pull-up resistor to +3.3V
is required since HSB acts as an open drain pull-
down. The VCAP pins from the other STK14C88-3
parts can be tied together and share a single capac-
itor. The capacitor size must be scaled by the num-
ber of devices connected to it. When any one of the
STK14C88-3s detects a power loss and asserts
HSB, the common HSB pin will cause all parts to
request a STORE cycle (a STORE will take place in
those STK14C88-3s that have been written since
the last nonvolatile cycle).
During any STORE operation, regardless of how it
was initiated, the STK14C88-3 will continue to drive
the HSB pin low, releasing it only when the STORE is
complete. Upon completion of the STORE operation
the STK14C88-3 will remain disabled until the HSB
pin returns high.
If HSB is not used, it should be left unconnected.
BEST PRACTICES
nvSRAM products have been used effectively for
over 15 years. While ease-of-use is one of the prod-
uct’s main system values, experience gained work-
ing with hundreds of applications has resulted in the
following suggestions as best practices:
• The non-volatile cells in an nvSRAM are pro-
grammed on the test floor during final test and
quality assurance. Incoming inspection routines
at customer or contract manufacturer’s sites will
sometimes reprogram these values. Final NV pat-
terns are typically repeating patterns of AA, 55,
00, FF, A5, or 5A. End product’s firmware should
not assume an NV array is in a set programmed
state. Routines that check memory content val-
ues to determine first time system configuration,
cold or warm boot status, etc. should always pro-
gram a unique NV pattern (e.g., complex 4-byte
pattern of 46 E6 49 53 hex or more random
bytes) as part of the final system manufacturing
test to ensure these system routines work consis-
tently.
• Power up boot firmware routines should rewrite
the nvSRAM into the desired state (autostore
enabled, etc.). While the nvSRAM is shipped in a
preset state, best practice is to again rewrite the
nvSRAM into the desired state as a safeguard
against events that might flip the bit inadvertently
(program bugs, incoming inspection routines,
etc.).
• The Vcap value specified in this datasheet
includes a minimum and a maximum value size.
Best practice is to meet this requirement and not
exceed the max Vcap value because the nvSRAM
internal algorithm calculates Vcap charge time
based on this max Vcap value. Customers that
want to use a larger Vcap value to make sure
there is extra store charge and store time should
discuss their Vcap size selection with Simtek to
understand any impact on the Vcap voltage level
at the end of a tRECALL period.
Document Control #ML0015 Rev 2.0
12
Feb, 2008