STI14NM65N Ver la hoja de datos (PDF) - STMicroelectronics

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fabricante

STI14NM65N

N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247

STMicroelectronics 

STB/F/I/P/W14NM65N

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

TO-220, TO-247

D²PAK, I²PAK

TO-220FP

Unit

VDS Drain-source voltage (VGS=0)

650

VGS Gate-source voltage

± 25

ID Drain current (continuous) at TC = 25 °C

12

12(1)

ID Drain current (continuous) at TC = 100 °C

7.6

7.6 (1)

IDM (2) Drain current (pulsed)

48

48(1)

PTOT Total dissipation at TC = 25 °C

125

30

dv/dt (3) Peak diode recovery voltage slope

15

VISO

Tstg

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t=1 s;TC=25 °C)

Storage temperature

--

2500

-55 to 150

TJ Max. operating junction temperature

150

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 12 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS

Table 3. Thermal data

Symbol

Parameter

Value

TO-220 I²PAK D²PAK TO-247 TO-220FP

V

V

A

A

A

W

V/ns

V

°C

°C

Unit

Rthj-case

Thermal resistance

junction-case max

Rthj-amb

Thermal resistance

junction-amb max

Rthj-pcb

Thermal resistance

junction-pcb max

Maximum lead

Tl temperature for soldering

purposes

1

62.5

--

50

--

--

30

--

300

4.2

°C/W

62.5

°C/W

--

°C/W

°C

Table 4.

Symbol

Avalanche characteristics

Parameter

Max value

Unit

IAS

Avalanche current, repetitive or not-

repetitive (pulse width limited by TJ max)

Single pulse avalanche energy

EAS (starting TJ=25 °C, ID=IAS, VDD= 50 V)

3

A

300

mJ

3/18

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