STD4N25 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

fabricante

STD4N25

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STMicroelectronics 

Fig. 3: Switching Times Test Circuits For

Resistive Load

STD4N25

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

7/10

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