STB55NF03L Ver la hoja de datos (PDF) - STMicroelectronics

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fabricante

STB55NF03L

N-CHANNEL 30V - 0.01 Ω- 55A TO-220/D2PAK/I2PAK STripFET™ II POWER MOSFET

STMicroelectronics 

STP55NF03L STB55NF03L/-1

THERMAL DATA

Rthj-case Thermal Resistance Junction-case

Max

Rthj-amb Thermal Resistance Junction-ambient

Max

Tl

Maximum Lead Temperature For Soldering Purpose

Typ

1.875

62.5

300

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min. Typ.

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

30

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16V

°C/W

°C/W

°C

Max.

Unit

V

1

µA

10

µA

±100

nA

ON (*)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS

ID = 250 µA

VGS = 10 V

VGS = 4.5 V

ID = 27.5 A

ID = 27.5 A

Min.

1

Typ. Max.

0.01 0.013

0.013 0.020

Unit

V

Ω

Ω

DYNAMIC

Symbol

Parameter

gfs (*)

Forward Transconductance

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS > ID(on) x RDS(on)max,

ID = 27.5 A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

30

1265

435

115

Max.

Unit

S

pF

pF

pF

2/11

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