SSR2010CTZ Ver la hoja de datos (PDF) - Solid State Devices, Inc.
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fabricante
SSR2010CTZ Datasheet PDF : 2 Pages
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS 1/, 2/
Instantaneous Forward Voltage Drop
(300 - 500µs Pulse)
Instantaneous Forward Voltage Drop
(300 - 500µs Pulse)
Reverse Leakage Current
(300µs pulse minimum)
Junction Capacitance
(VR = 10 V, f = 1MHz, TA = 25°C)
CASE OUTLINE: TO-254 (Suffix M)
SSR2008CTM, SSR2008CTZ
SSR2009CTM, SSR2009CTZ
SSR2010CTM, SSR2010CTZ
IF = 1A
IF = 5A
IF = 10A
IF = 10A, TA = 100°C
IF = 10A, TA = -55°C,
VR = 100V, TA = 25°C
VR = 100V, TC = 100°C
Symbol
VF1
VF2
VF3
VF4
VF5
IR1
IR2
CJ
Max
0.57
0.72
0.80
0.70
0.90
100
5
400
CASE OUTLINE: TO-254Z (Suffix Z)
Unit
Volts
Volts
µA
mA
pF
OPTIONAL LEAD BEND CONFIGURATION
CODE
CT
CA
D
DR
PIN ASSIGNMENT
FUNCTION
PIN 1 PIN 2 PIN 3
Common Cathode Anode Cathode Anode
Common Anode Cathode Anode Cathode
Doubler
Cathode Common Anode
Reverse Doubler Anode Common Cathode
SUFFIX MDB & ZDB
SUFFUX MUB & ZUB
NOTE:
1/ All Electrical Characteristics @25°C, Unless Otherwise Specified.
2/ Per Leg.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0075F
DOC
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