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2N2089RLREG

Amplifier Transistors

ON Semiconductor 

2N5088, 2N5089

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 2)

(IC = 1.0 mAdc, IB = 0)

2N5088

2N5089

Collector −Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

2N5088

2N5089

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0)

(VCB = 15 Vdc, IE = 0)

Emitter Cutoff Current

(VEB(off) = 3.0 Vdc, IC = 0)

(VEB(off) = 4.5 Vdc, IC = 0)

ON CHARACTERISTICS

2N5088

2N5089

DC Current Gain

(IC = 100 mAdc, VCE = 5.0 Vdc)

2N5088

2N5089

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

2N5088

2N5089

(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)

Collector −Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

Base −Emitter On Voltage

(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)

SMALL−SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product

(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)

Collector−Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Emitter−Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

Noise Figure

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW,

f = 1.0 kHz)

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2N5088

2N5089

2N5088

2N5089

2N5088

2N5089

Symbol

Min

Max

Unit

V(BR)CEO

30

25

V(BR)CBO

35

30

ICBO

−

−

IEBO

−

−

Vdc

−

−

Vdc

−

−

nAdc

50

50

nAdc

50

100

hFE

VCE(sat)

VBE(on)

−

300

900

400 1200

350

−

450

−

300

−

400

−

−

0.5

Vdc

−

0.8

Vdc

fT

50

−

MHz

Ccb

−

4.0

pF

Ceb

−

10

pF

hfe

−

350 1400

450 1800

NF

dB

−

3.0

−

2.0

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

http://onsemi.com

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