SI2301-TP(2008) Ver la hoja de datos (PDF) - Micro Commercial Components

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SI2301-TP
(Rev.:2008)

P-Channel Enhancement Mode Field Effect Transistor

Micro Commercial Components 

MCC

TM

Micro Commercial Components

SI2301

Electrical Characteristics TA = 25 C unless otherwise noted

Parameter

Symbol

Test Condition

Min Typ Max Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics c

BVDSS

IDSS

IGSSF

IGSSR

VGS = 0V, ID = -250µA -20

VDS = -20V, VGS = 0V

VGS = 8V, VDS = 0V

VGS = -8V, VDS = 0V

V

-1

µA

100 nA

-100 nA

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Forward Transconductance

Dynamic Characteristics d

VGS(th)

RDS(on)

gFS

VGS = VDS, ID = -250µA -0.45

V

VGS = -4.5V, ID = -2.8A

80 120 mΩ

VGS = -2.5V, ID = -2.0A

110 150 mΩ

VDS = -5V, ID = -2.8A

8

S

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics d

Ciss

Coss

Crss

VDS = -6V, VGS = 0V,

f = 1.0 MHz

880

pF

270

pF

175

pF

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

td(on)

tr

td(off)

VDD = -6V, ID = -1A,

VGS = -4.5V, RGEN = 6Ω

Turn-Off Fall Time

tf

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

Qgs

VDS = -6V, ID = -2.8A,

VGS = -4.5V

Qgd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current b

IS

Drain-Source Diode Forward Voltage c

VSD

VGS = 0V, IS = -0.75A

11

20

ns

5

10

ns

32

65

ns

23

45

ns

11 14.5 nC

1.5

nC

2.1

nC

-0.75 A

-1.2 V

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Surface Mounted on FR4 Board, t < 5 sec.

c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

d.Guaranteed by design, not subject to production testing.

Revision: 3

www.mccsemi.com

2 of 5

2008/01/15

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