SH8M14 Ver la hoja de datos (PDF) - ROHM Semiconductor

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SH8M14

4V Drive Nch + Pch MOSFET

ROHM Semiconductor 

SH8M14

　

Data Sheet

FIg.13 Typical Capacitance vs. Drain-Source Voltage

10000

Ta=25°C

f=1MHz

VGS=0V

1000

Ciss

100

Coss

Crss

10

0.01

0.1

1

10

100

Drain-Source Voltage : VDS [V]

FIg.15 Normalized Transient Thermal Resistance v.s. Pulse Width

10

Ta=25°C

Single Pulse : 1Unit

1

0.1

0.01

0.001

0.0001 0.001

Mounted on a ceramic board.

(30mm × 30mm × 0.8mm)

Rth(ch-a)=89.3°C/W

Rth(ch-a)(t)=r(t)×Rth(ch-a)

0.01

0.1

1

10

100 1000

Pulse width : Pw (s)

Fig.14 Maximum Safe Operating Area

100

Operation in this area is limited by RDS(on)

(VGS = 10V)

10

PW = 100μs

PW = 1ms

1

PW = 10ms

0.1

Ta=25°C

Single Pulse : 1Unit

Mounted on a ceramic board.

(30mm × 30mm × 0.8mm)

0.01

0.1

1

10

Drain-Source Voltage : VDS [ V ]

DC Operation

100

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2011.06 - Rev.A

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