SGL60N90DG Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
fabricante
SGL60N90DG Datasheet PDF : 9 Pages
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10000
Cies
1000
Coes
100
Cres
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
0.1
1
10
Collector-Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
1000
V = 600V
CC
R = 51Ω
G
V = ± 15V
GE
T = 25 ℃
C
Tdoff
Tr
Tdon
Tf
100
10
20
30
40
50
60
Collector Current, I C [A]
Fig 9. Switching Characteristics vs.
Collector Current
IC MAX. (Pulsed)
100
IC MAX. (Continuous)
10
DC Operation
10us
10ms
100us
1ms
1 Single Nonrepetitive Pulse
TC = 25℃
Curve must be darated
linearly with increase
in temperature
0.1
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Fig 11. SOA Characteristics
©2002 Fairchild Semiconductor Corporation
10000
1000
V = 600V
CC
I = 60A
C
V = ± 15V
GE
T = 25 ℃
C
Tr
Tf
100 Tdoff
Tdon
10
0
50
100
150
200
Gate Resistance, RG [Ω]
Fig 8. Switching Characteristics vs.
Gate Resistance
15
Common Emitter
VCC = 600V, RL = 10Ω
T = 25℃
C
12
9
6
3
0
0
100
200
300
Gate Charge, Qg [nC]
Fig 10. Gate Charge Characteristics
10
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Pdm
t1
t2
single pulse
1E-3
10-4
10-3
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
Fig 12. Transient Thermal Impedance of IGBT
SGL60N90DG3 Rev. A1
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