SGL60N90DG Ver la hoja de datos (PDF) - Fairchild Semiconductor
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SGL60N90DG Datasheet PDF : 9 Pages
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Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCES
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VGE = 0V, IC = 250uA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 60mA, VCE = VGE
IC = 10A, VGE = 15V
IC = 60A, VGE = 15V
VCE=10V, VGE = 0V,
f = 1MHz
VCC = 600 V, IC = 60A,
RG = 51Ω, VGE=15V,
Resistive Load, TC = 25°C
VCE = 600 V, IC = 60A,
VGE = 15V
900
--
--
V
--
--
1.0
mA
--
-- ± 500 nA
4.0
5.0
7.0
V
--
1.4 1.8
V
--
2.0 2.7
V
-- 6500 --
pF
--
250
--
pF
--
220
--
pF
--
250 400
ns
--
450 700
ns
--
450 700
ns
--
250 400
ns
--
260 300 nC
--
70
--
nC
--
60
--
nC
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
VFM
trr
IR
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Instantaneous Reverse Current
Test Conditions
IF = 15A
IF = 60A
IF = 60A di/dt = 20 A/us
VRRM = 900V
Min.
--
--
--
Typ.
1.2
1.75
1.2
0.05
Max.
1.7
2.0
1.5
2
Units
V
V
us
uA
©2002 Fairchild Semiconductor Corporation
SGL60N90DG3 Rev. A1
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