SGL50N60 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
fabricante
SGL50N60 Datasheet PDF : 7 Pages
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7000
6000
5000
4000
Cies
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
3000
2000
1000
Coes
Cres
0
1
10
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 50A
C
T = 25℃ ━━
C
T = 125℃ ------
C
Toff
Toff
Tf
Tf
100
10
100
Gate Resistance, RG [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
1000
Common Emitter
VGE = ± 15V, RG = 5.9Ω
TC = 25℃ ━━
TC = 125℃ ------
Ton
Tr
100
10
10 20
40
60
80
100
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
IC = 50A
T = 25℃ ━━
C
TC = 125℃ ------
Ton
Tr
100
10
100
Gate Resistance, RG [Ω]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
10000
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 50A
C
TC = 25℃ ━━
Eon
TC = 125℃ ------
Eoff
Eoff
1000
10
100
Gate Resistance, RG [Ω ]
Fig 10. Switching Loss vs. Gate Resistance
1000
Toff
Tf
Toff
100
Tf
10 20
Common Emitter
VGE = ± 15V, RG = 5.9Ω
TC = 25℃ ━━
TC = 125℃ ------
40
60
80
100
Collector Current, I [A]
C
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGL50N60RUF Rev. A1
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