SEMIX302GB12VS Ver la hoja de datos (PDF) - Semikron
Número de pieza
componentes Descripción
fabricante
SEMIX302GB12VS Datasheet PDF : 5 Pages
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SEMiX302GB12Vs
SEMiX® 2s
SEMiX302GB12Vs
Features
• Homogeneous Si
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
RGon,main = 0,5
RGoff,main = 0,5
RG,X = 2,2
RE,X = 0,5
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 300 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
rF
IRRM
Qrr
Err
Rth(j-c)
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
IF = 300 A
Tj = 150 °C
di/dtoff = 5800 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per diode
Module
LCE
RCC'+EE'
res., terminal-chip
TC = 25 °C
TC = 125 °C
Rth(c-s)
Ms
Mt
per module
to heat sink (M5)
to terminals (M6)
min.
1.1
0.7
2.2
3.5
3
2.5
typ.
2.1
2.1
1.3
0.9
2.8
3.9
318
54
21.8
18
0.7
1
0.045
max.
2.46
2.4
1.5
1.1
3.2
4.3
0.17
5
5
w
Temperatur Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
250
493 ± 5%
3550
±2%
Unit
V
V
V
V
m
m
A
µC
mJ
K/W
nH
m
m
K/W
Nm
Nm
Nm
g
K
GB
2
Rev. 2 – 16.02.2011
© by SEMIKRON
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