HYM72V8035GS-50 Ver la hoja de datos (PDF) - Infineon Technologies

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HYM72V8035GS-50

8M × 72-Bit EDO- DRAM Module (ECC - Module)

Infineon Technologies 

HYM72V8025/35GS-50/-60

8M x 72-ECC EDO-Module

AC Characteristics (contd’ ) (note: 5,6,7,8)

TA = 0 to 70 °C,VCC = 3.3 ± 0.3 V

Parameter

Symbol

-50

min. max.

-60

min. max.

Unit Note

Fast Page Mode Read-Modify-Write Cycle

Fast page mode read-write cycle time tPRWC

CAS precharge to WE

tCPWD

CAS-before-RAS Refresh Cycle

CAS setup time

tCSR

CAS hold time

tCHR

RAS to CAS precharge time

tRPC

Write to RAS precharge time

tWRP

Write hold time referenced to RAS

tWRH

Presence Detect Read Cycle

PDE to valid presence detect data

PDE inactive to presence detects

inactive

tPD

tPDOFF

60

–

70

–

ns 11

43

–

51

–

ns 11,21

12

–

12

–

ns 11

8

–

8

– ns 10

5

–

5

– ns

12

–

12

– ns 11

8

–

8

– ns 10

–

10

–

10 ns

0

10

0

10 ns

Semiconductor Group

9

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