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HYM328025S-60

8M × 32-Bit EDO-DRAM Module

Infineon Technologies 

HYM328025S/GS-50/-60

8M × 32-Bit EDO-Module

Absolute Maximum Ratings

Operation temperature range ......................................................................................... 0 to + 70 °C

Storage temperature range......................................................................................... – 55 to 125 °C

Input/output voltage ............................................................................ –0.5V to min (Vcc+0.5, 7.0) V

Power supply voltage...................................................................................................... – 1 to + 7 V

Power dissipation................................................................................................................... 6.72 W

Data out current (short circuit) ................................................................................................ 50 mA

Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent

damage of the device. Exposure to absolute maximum rating conditions for extended periods

may affect device reliability.

DC Characteristics

TA = 0 to 70 °C, VCC = 5 V ± 10 %

Parameter

Input high voltage

Input low voltage

Output high voltage (IOUT = – 5 mA)

Output low voltage (IOUT = 4.2 mA)

Input leakage current

(0 V < VIN < 6.5 V, all other pins = 0 V)

Output leakage current

(DO is disabled, 0 V < VOUT < 5.5 V)

Average VCC supply current

(RAS, CAS, address cycling, tRC = tRC min)

-50 version

-60 version

Symbol

VIH

VIL

VOH

VOL

II(L)

IO(L)

ICC1

Limit Values

min.

max.

2.4

Vcc+0.5

– 0.5

0.8

2.4

–

–

0.4

– 20

20

– 10

10

–

960

–

880

Unit Test

Condition

V 1)

V 1)

V 1)

V 1)

µA 1)

µA 1)

mA 2) 3) 4)

mA

Standby VCC supply current

(RAS = CAS = VIH)

ICC2

–

Average VCC supply current

ICC3

during RAS only refresh cycles

(RAS cycling, CAS = VIH, tRC = tRC min)

-50 version

–

-60 version

–

32

mA

960

mA 2) 4)

880

mA

Semiconductor Group

5

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