RSM002N06 Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
fabricante
RSM002N06 Datasheet PDF : 6 Pages
| |||
2.5V Drive Nch MOSFET
RSM002N06
Structure
Silicon N-channel MOSFET
Features
1) High speed switing.
2) Small package(VMT3).
3) Low voltage drive(2.5V drive).
Application
Switching
Dimensions (Unit : mm)
VMT3
Abbreviated symbol : RK
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSM002N06
Taping
T2L
8000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
60
V
VGSS
20
V
ID
250
mA
IDP *1
1
A
IS
125
mA
ISP *1
1
A
PD *2
150
mW
Tch
150
C
Tstg 55 to +150 C
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
Inner circuit
(3)
∗2
(1)
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) GATE
(2) SOURCE
(3) DRAIN
Thermal resistance
Parameter
Channel to ambient
* Each terminal mounted on a recommended land.
Symbol
Rth (ch-a)*
Limits
833
Unit
C / W
www.rohm.com
1/5
○c 2010 ROHM Co., Ltd. All rights reserved.
2010.04 - Rev.A
Share Link: 