ISL9R8120S3S Ver la hoja de datos (PDF) - Fairchild Semiconductor
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ISL9R8120S3S Datasheet PDF : 6 Pages
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Package Marking and Ordering Information
Device Marking
R8120P2
R8120S3S
Device
ISL9R8120P2
ISL9R8120S3S
Package
TO-220AC
TO-263AB
Tape Width
N/A
24mm
Quantity
50
800
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
IR
Instantaneous Reverse Current
VR = 1200V
TC = 25°C
TC = 125°C
-
- 100 µA
-
- 1.0 mA
On State Characteristics
VF Instantaneous Forward Voltage
IF = 8A
TC = 25°C
TC = 125°C
- 2.8 3.3 V
- 2.7 3.1 V
Dynamic Characteristics
CJ Junction Capacitance
VR = 10V, IF = 0A
-
30
-
pF
Switching Characteristics
trr
Reverse Recovery Time
IF = 1A, dIF/dt = 100A/µs, VR = 30V
-
25 32 ns
IF = 8A, dIF/dt = 100A/µs, VR = 30V
-
35 44 ns
trr
IRM(REC)
QRR
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
IF = 8A,
dIF/dt = 200A/µs,
VR = 780V, TC = 25°C
- 300 -
ns
- 4.3 -
A
- 525
-
nC
trr
S
IRM(REC)
QRR
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
IF = 8A,
dIF/dt = 200A/µs,
VR = 780V,
TC = 125°C
- 375 -
ns
-
9
-
-
- 5.5 -
A
-
1.1
-
µC
trr
S
IRM(REC)
QRR
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
IF = 8A,
dIF/dt = 1000A/µs,
VR = 780V,
TC = 125°C
- 200 -
ns
- 5.5 -
-
-
11
-
A
-
1.2
-
µC
dIM/dt Maximum di/dt during tb
- 310 - A/µs
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case TO-220, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-263
-
- 1.75 °C/W
-
-
62 °C/W
©2002 Fairchild Semiconductor Corporation
ISL9R8120P2 / ISL9R8120S3S Rev. A
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