RN4987(2014) Ver la hoja de datos (PDF) - Toshiba

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RN4987
(Rev.:2014)

TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)

Toshiba 

RN4987

Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector power dissipation

Junction temperature

Storage temperature range

PC *

Tj

Tstg

200

mW

150

°C

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* : Total rating

Marking

Equivalent Circuit (Top View)

2

2014-03-01

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