RN4986 Ver la hoja de datos (PDF) - Toshiba

Número de pieza

componentes Descripción

fabricante

RN4986

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)

Toshiba 

Q1, Q2 Common Maximum Ratings (Ta = 25°C)

Characteristic

Collector power dissipation

Junction temperature

Storage temperature range

* Total rating

Symbol

PC *

Tj

Tstg

Rating

Unit

200

mW

150

°C

−55~150

°C

Marking

Equivalent Circuit (Top View)

RN4986

2

2001-06-07

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