RN4902FE Ver la hoja de datos (PDF) - Toshiba

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RN4902FE

Transistor Silicon PNP NPN Epitaxial Type(PCT Process) (Bias Resistor Built-in Transistor)

Toshiba 

Electrical Characteristics (Ta = 25°C) (Q1)

Characteristics

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Input voltage (ON)

Input voltage (OFF)

Transition frequency

Collector output capacitance

Symbol

Test Condition

ICBO

ICEO

IEBO

hFE

VCE (sat)

VI (ON)

VI (OFF)

fT

Cob

VCB = −50 V, IE = 0

VCE = −50 V, IB = 0

VEB = −10 V, IC = 0

VCE = −5 V, IC = −10 mA

IC = −5 mA, IB = −0.25 mA

VCE = −0.2 V, IC = −5 mA

VCE = −5 V, IC = −0.1 mA

VCE = −10 V, IC = −5 mA

VCB = −10 V, IE = 0, f = 1 MHz

Electrical Characteristics (Ta = 25°C) (Q2)

Characteristics

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Input voltage (ON)

Input voltage (OFF)

Transition frequency

Collector output capacitance

Symbol

Test Condition

ICBO

ICEO

IEBO

hFE

VCE (sat)

VI (ON)

VI (OFF)

fT

Cob

VCB = 50 V, IE = 0

VCE = 50 V, IB = 0

VEB = 10 V, IC = 0

VCE = 5 V, IC = 10 mA

IC = 5 mA, IB = 0.25 mA

VCE = 0.2 V, IC = 5 mA

VCE = 5 V, IC = 0.1 mA

VCE = 10 V, IC = 5 mA

VCB = 10 V, IE = 0, f = 1 MHz

Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)

Characteristics

Input resistor

Resistor ratio

Symbol

R1

R1/R2

Test Condition

⎯

⎯

RN4902FE

Min Typ. Max Unit

⎯

⎯

−0.32

50

⎯

−1.2

−1.0

⎯

⎯

⎯

⎯

⎯

⎯

−0.1

⎯

⎯

200

3

−100

−500

−0.71

⎯

−0.3

−2.4

−1.5

⎯

6

nA

mA

V

V

V

MHz

pF

Min Typ. Max Unit

⎯

⎯

100

nA

⎯

⎯

500

0.38 ⎯ 0.71 mA

50

⎯

⎯

⎯

0.1 0.3

V

1.2

⎯

2.4

V

1.0

⎯

1.5

V

⎯

250

⎯ MHz

⎯

3

6

pF

Min Typ. Max Unit

7

10

13

kΩ

0.9 1.0 1.1

3

2007-11-01

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