RN2101CT Ver la hoja de datos (PDF) - Toshiba

Número de pieza

componentes Descripción

fabricante

RN2101CT

Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

Toshiba 

RN2101CT

1000

hFE - IC

RN2101CT ~ RN2106CT

RN2102CT

1000

hFE - IC

100

10

1

-1

Ta=100°C

25

-25

EMITTER COMMON

VCE= -5V

-10

COLLECTOR CURRENT　IC (mA)

-100

RN219063CFST

1000

hFE - IC

Ta=100°C

25

100

-25

Ta=100°C

100

25

-25

10

-1

EMITTER COMMON

VCE= -5V

-10

COLLECTOR CURRENT　IC (mA)

-100

RN2104CT

1000

hFE - IC

Ta=100°C

25

-25

100

10

-1

EMITTER COMMON

VCE= -5V

-10

COLLECTOR CURRENT　IC (mA)

-100

RN2105CT

1000

hFE - IC

Ta=100°C

25

100

-25

10

-1

EMITTER COMMON

VCE= -5V

-10

COLLECTOR CURRENT　IC (mA)

-100

RN2106CT

1000

hFE - IC

Ta=100°C

25

-25

100

10

-1

EMITTER COMMON

VCE= -5V

-10

COLLECTOR CURRENT　IC (mA)

-100

10

-1

EMITTER COMMON

VCE= -5V

-10

COLLECTOR CURRENT IC (mA)

-100

5

2009-04-17

Share Link: