
BAT 63-099R
Forward current IF = f (VF)
Diode capacitance CT = f (VR)
f = 1MHz
10 2
mA
IF 10 1
10 0
10 -1
TA = 25°C
TA = 85°C
TA = 125°C
0.5
CT pF
0.3
0.2
0.1
10 -2
0.0
0.2
0.4
0.6
Leakage current IR = f (VR)
TA = Parameter
V
1.0
VF
10 3
uA
IR 10 2
TA = 125°C
0.0
0
5
10
15
20
V
30
VR
TA = 85°C
10 1
10 0
TA = 25°C
10 -1
0
5 10 15 20 25 30 V 40
VR
Semiconductor Group
3
Feb-01-1996