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PSMN1R0-30YLC
Philips Electronics
PSMN1R0-30YLC Datasheet PDF : 15 Pages
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NXP Semiconductors
PSMN1R0-30YLC
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using
Table 7.
Symbol
td(on)
tr
td(off)
tf
Qoss
Characteristics …continued
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
output charge
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
ta
reverse recovery rise time
tb
reverse recovery fall time
Conditions
VDS = 15 V; RL = 0.6 Ω; VGS = 4.5 V;
RG(ext) = 4.7 Ω
VGS = 0 V; VDS = 15 V; f = 1 MHz;
Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 17
IS = 25 A; dIS/dt = -100 A/µs;
VGS = 0 V; VDS = 15 V
VGS = 0 V; IS = 25 A;
dIS/dt = -100 A/µs; VDS = 15 V;
see Figure 18
Min Typ Max Unit
-
44
-
ns
-
77
-
ns
-
108 -
ns
-
60 -
ns
-
35.2 -
nC
-
0.8 1.1 V
-
45
-
ns
-
67 -
nC
-
28.5 -
ns
-
16.5 -
ns
100
ID
(A)
75
3.0 2.8
4.5
10.0
003aae943
2.6
8
RDS on
(m)
6
003aae944
50
VGS (V) = 2.4
4
25
0
0
2.2
0.5
1
VDS (V)
2
0
0
4
8
12
16
VGS (V)
Fig 6. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
PSMN1R0-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 4 July 2011
© NXP B.V. 2011. All rights reserved.
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