PBSS8110Z Ver la hoja de datos (PDF) - NXP Semiconductors.
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PBSS8110Z Datasheet PDF : 14 Pages
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NXP Semiconductors
PBSS8110Z
100 V, 1 A NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aaa821
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS8110Z_2
Product data sheet
Rev. 02 — 8 January 2007
© NXP B.V. 2007. All rights reserved.
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