PBSS3515M,315 Ver la hoja de datos (PDF) - NXP Semiconductors.
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PBSS3515M,315 Datasheet PDF : 9 Pages
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NXP Semiconductors
15 V, 0.5 A
PNP low VCEsat (BISS) transistor
Product data sheet
PBSS3515M
−1200
handbook, halfpage
IC
(mA)
−800
−400
MLD666
(4) (3) (2) (1)
(5)
(6)
(7)
(8)
(9)
(10)
0
0
−2
−4
−6
−8
−10
VCE (V)
Tamb = 25 °C.
(1) IB = −7 mA.
(2) IB = −6.3 mA.
(3) IB = −5.6 mA.
(4) IB = −4.9 mA.
(5) IB = −4.2 mA.
(6) IB = −3.5 mA.
(7) IB = −2.8 mA.
(8) IB = −2.1 mA.
(9) IB = −1.4 mA.
(10) IB = −0.7 mA.
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
103
handbook, halfpage
RCEsat
(Ω)
102
MLD670
10
1
10−1
−10−1
−1
(1)
(2) (3)
−10
−102
−103
IC (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.7 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2003 Jul 22
6
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