PBSS3515E,115 Ver la hoja de datos (PDF) - Philips Electronics
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PBSS3515E,115 Datasheet PDF : 11 Pages
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Philips Semiconductors
PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2:
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Symbol
3
3
1
2
1
2
sym013
3. Ordering information
Table 3: Ordering information
Type number Package
Name
Description
PBSS3515E
SC-75
plastic surface mounted package; 3 leads
Version
SOT416
4. Marking
Table 4: Marking codes
Type number
PBSS3515E
Marking code
1R
5. Limiting values
9397 750 14878
Product data sheet
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
collector-base voltage open emitter
-
VCEO
collector-emitter voltage open base
-
VEBO
emitter-base voltage
open collector
-
IC
collector current (DC)
-
ICM
peak collector current single pulse;
-
tp ≤ 1 ms
IBM
peak base current
single pulse;
-
tp ≤ 1 ms
Ptot
total power dissipation Tamb ≤ 25 °C
[1] -
[2] -
Tj
junction temperature
-
Tamb
ambient temperature
−65
Tstg
storage temperature
−65
Max Unit
−15
V
−15
V
−6
V
−0.5 A
−1
A
−100 mA
150
mW
250
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
Rev. 01 — 18 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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