GS8160E18T-225I Ver la hoja de datos (PDF) - Giga Semiconductor

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GS8160E18T-225I

1M x 18, 512K x 36 18Mb Sync Burst SRAMs

Giga Semiconductor 

GS8160E18/32/36T-250/225/200/166/150/133

18Mb Sync SRAM Datasheet Revision History

DS/DateRev. Code: Old;

New

8160E18_r2_08;

8160E18_r2_09

8160E18_r2_09;

8160E18_r2_10

8160E18_r2_10;

8160E18_r2_11

8160E18_r2_11;

8160E18_r2_12

8160E18_r2_12;

8160E18_r2_13

Types of Changes

Format or Content

Page;Revisions;Reason

Content

Content

Content

Content

• Updated Operating Currents table

• Updated table on page 1; updated power numbers

• Updated Recommended Operating Conditions table (added

VDDQ references)

• Updated table on page 1

• Created recommended operating conditions tables on pages

12 and 13

• Updated AC Electrical Characteristics table

• Added Sleep mode description on page 23

• Updated Ordering Information for 225 MHz part (changed

from 7ns to 6.5 ns)

• Added 250 MHz speed bin

• Deleted 180 MHz speed bin

• Updated AC Characteristics table

• Updated FT power numbers

• Updated ZZ recovery time diagram

• Updated Mb references from 16Mb to 18Mb

• Updated AC Test Conditions table and removed Output Load

2 diagram

• Removed pin locations from pin description table

• Removed Preliminary banner

• Updated format

Format/Content • Updated timing diagrams

Rev: 2.13 11/2004

25/25

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 1999, GSI Technology

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