NTE2940 Ver la hoja de datos (PDF) - NTE Electronics

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NTE2940

MOSFET N−Channel, Enhancement Mode High Speed Switch

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Drain−Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA

60 − − V

Gate Threshold Voltage

VGS(th) VDS = VGS, ID = 250µA

2.0 − 4.0 V

Gate−Source Leakage Forward

IGSS VGS = 20V

− − 100 nA

Gate−Source Leakage Reverse

IGSS VGS = −20V

− − −100 nA

Zero Gate Voltage Drain Current

IDSS VDS = Max. Rating, VGS = 0

− − 250 µA

VDS = 0.8 Max. Rating, TC = +150°C

− − 1000 µA

Static Drain−Source ON Resistance RDS(on) VGS = 10V, ID = 8A, Note 4

− − 0.10 Ω

Forward Transconductance

gfs VDS ≥ 50V, ID = 8A, Note 4

5.6 − − mhos

Input Capacitance

Ciss VGS = 0V, VDS = 25V, f = 1MHz

− 635 − pF

Output Capacitance

Coss

− 218 − pF

Reverse Transfer Capacitance

Crss

− 105 − pF

Turn−On Delay Time

Rise Time

Turn−Off Delay Time

td(on) VDD = 0.5 BVDSS, ID = 15A, ZO = 24Ω,

−

tr

(MOSFET switching times are essentially

independent of operating temperature)

−

td(off)

−

− 30 ns

− 90 ns

− 40 ns

Fall Time

tf

− − 30 ns

Total Gate Charge

(Gate−Source Plus Gate−Drain)

Gate−Source Charge

Gate−Drain (“Miller”) Charge

Qg VGS = 10V, ID = 15A, VDS = 0.8 Max.

− − 33 nC

Qgs

Rating, (Gate charge is essentially indepen-

dent of operating temperature)

−

6.3

−

nC

Qgd

− 12.3 − nC

Source−Drain Diode Ratings and Characteristics

Continuous Source Current

Pulse Source Current

Diode Forward Voltage

Reverse Recovery Time

IS (Body Diode)

ISM (Body Diode) Note 2

VSD TJ = +25°C, IS = 15A, VGS = 0V, Note 4

trr TJ = +25°C, IF = 15A, dIF/dt = 100A/µs

− − 1.5 A

− − 60 A

− − 1.5 V

− − 310 ns

Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.

Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

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