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NIS5112
(Rev.:2006)

Electronic Fuse

ON Semiconductor 

NIS5112

Electronic Fuse

The NIS5112 is an integrated switch utilizing a high side N−channel

FET driven by an internal charge pump. This switch features a

SENSEFETt which allows for current sensing using inexpensive

chip resistors instead of expensive, low impedance current shunts.

It is designed to operate in 12 V systems and includes a robust

thermal protection circuit.

Features

• Integrated Power Device

• Power Device Thermally Protected

• No External Current Shunt Required

• Enable/Timer Pin

• Adjustable Slew Rate for Output Voltage

• 9 V to 18 V Input Range

• 30 mW Typical

• Internal Charge Pump

• These are Pb−Free Devices

Typical Applications

• Hard Drives

http://onsemi.com

MARKING

DIAGRAM

8

1

SOIC−8 NB

CASE 751

8

112x

AYWWG

G

1

x

= L for thermal latch off

= H for thermal auto−retry

A

= Assembly Location

Y

= Year

WW = Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

8

VCC

Voltage

Regulator

Charge

Pump

Thermal

Latch

Overvoltage

Clamp

Current

Limit

ORDERING INFORMATION

Device

NIS5112D1R2G

Package

SOIC−8

Latch Off

(Pb−Free)

Shipping†

2500

Tape & Reel

NIS5112D2R2G

SOIC−8

Auto−Retry

(Pb−Free)

2500 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Current Limit

4

Source

5, 6, 7

Enable/

Timer

Voltage

Slew Rate

Enable/Timer

3

GND

1

Figure 1. Block Diagram

dV/dt

2

© Semiconductor Components Industries, LLC, 2006

1

November, 2006 − Rev. 4

Publication Order Number:

NIS5112/D

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