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NB100EP223 Ver la hoja de datos (PDF) - ON Semiconductor

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NB100EP223 Datasheet PDF : 10 Pages
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NB100EP223
VCC
GND
CLK_SEL
HSTL_CLK
0
HSTL_CLK
LVPECL_CLK
1
LVPECL_CLK
OE
Q
D
Figure 2. Logic Diagram
22 Q0Q21 (HSTL)
22 Q0Q21 (HSTL)
VCCO
Table 3. ATTRIBUTES
Characteristics
Value
Internal Input Pulldown Resistor
75 kW
Internal Input Pullup Resistor
37.5 kW
ESD Protection
Human Body Model
Machine Model
Charged Device Model
> 2 kV
> 150 V
> 2 kV
Moisture Sensitivity (Note 1)
Pb Pkg
PbFree Pkg
LQFP64
Level 2
Level 3
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V0 @ 0.125 in
Transistor Count
693
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, refer to Application Note AND8003/D.
Table 4. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
VCC
VCCO
VI
Iout
Core Power Supply
HSTL Output Power Supply
PECL Mode Input Voltage
Output Current
GND = 0 V
GND = 0 V
GND = 0 V
Continuous
Surge
VCCO = 1.8 V
VCC = 3.3 V
VI VCC
4
V
4
V
4
V
50
mA
100
mA
TA
Operating Temperature Range
Tstg
Storage Temperature Range
qJA
Thermal Resistance (JunctiontoAmbient) 0 lfpm
(See Application Information)
500 lfpm
64 LQFP
64 LQFP
0 to +85
65 to +150
35.6
30
°C
°C
°C/W
°C/W
qJC
Thermal Resistance (JunctiontoCase) 0 lfpm
(See Application Information)
500 lfpm
64 LQFP
64 LQFP
3.2
°C/W
6.4
°C/W
Tsol
Wave Solder
Pb
PbFree
265
°C
265
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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