1Semiconductor
FEDD51V16400F-01
MSM51V16400F
AC CHARACTERISTICS (2/2)
Parameter
Symbol
MSM51V16400
F-50
Min. Max.
(VCC = 3.3V ± 0.3V, Ta = 0 to 70°C) Note1,2,3
MSM51V16400 MSM51V16400
F-60
F-70
Unit Note
Min. Max. Min. Max.
Row Address Hold Time
tRAH
7
10
10
ns
Column Address Set-up Time
tASC
0
0
0
ns 11
Column Address Hold Time
tCAH
7
10
15
ns 11
Column Address to RAS Lead Time tRAL
25
30
35
ns
Read Command Set-up Time
tRCS
0
0
0
ns 11
Read Command Hold Time
tRCH
0
0
0
ns 8, 11
Read Command Hold Time
referenced to RAS
tRRH
0
0
0
ns 8
Write Command Set-up Time
tWCS
0
0
0
ns 9, 11
Write Command Hold Time
tWCH
7
10
15
ns 11
Write Command Pulse Width
tWP
7
10
10
ns
OE Command Hold Time
tOEH
13
15
20
ns
Write Command to RAS Lead Time tRWL 13
15
20
ns
Write Command to CAS Lead Time tCWL 13
15
20
ns 13
Data-in Set-up Time
tDS
0
0
0
ns 10, 11
Data-in Hold Time
tDH
7
10
15
ns 10, 11
OE to Data-in Delay Time
tOED
13
15
20
ns
CAS to WE Delay Time
tCWD 36
40
50
ns 9
Column Address to WE Delay Time tAWD 48
55
65
ns 9
RAS to WE Delay Time
tRWD 73
85
100
ns 9
CAS Precharge WE Delay Time
tCPWD 53
60
70
ns 9
CAS Active Delay Time from RAS
Precharge
tRPC
5
5
5
ns 11
RAS to CAS Set-up Time
(CAS before RAS)
tCSR
5
5
5
ns 11
RAS to CAS Hold Time
(CAS before RAS)
tCHR
10
10
10
ns 12
WE to RAS Precharge Time
(CAS before RAS)
tWRP 10
10
10
ns
WE Hold Time from RAS
(CAS before RAS)
tWRH 10
10
10
ns
RAS to WE Set-up Time (Test Mode) tWTS 10
10
10
ns
RAS to WE Hold Time (Test Mode) tWTH 10
10
10
ns
7/16