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MPSA18

Low Noise Transistor NPN Silicon

ON Semiconductor 

MPSA18

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 2)

(IC = 10 mAdc, IB = 0)

V(BR)CEO

45

−

Vdc

−

Collector −Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CBO

45

−

Vdc

−

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

6.5

−

Vdc

−

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

ICBO

nAdc

−

1.0

50

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 10 mAdc, VCE = 5.0 Vdc)

(IC = 100 mAdc, VCE = 5.0 Vdc)

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

(IC = 10 mAdc, VCE = 5.0 Vdc)

hFE

−

400

580

−

500

850

−

500

1100

−

500

1150 1500

Collector −Emitter Saturation Voltage

(IC = 10 mAdc, IB = 0.5 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat)

Vdc

−

−

0.2

−

0.08

0.3

Base −Emitter On Voltage

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

VBE(on)

Vdc

−

0.6

0.7

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

fT

MHz

100

160

−

Collector−Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Ccb

pF

−

1.7

3.0

Emitter−Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Ceb

pF

−

5.6

6.5

Noise Figure

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 kW, f = 1.0 kHz)

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 100 Hz)

NF

dB

−

0.5

1.5

−

4.0

−

Equivalent Short Circuit Noise Voltage

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 100 Hz)

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

VT

−

6.5

−

nVńǸHz

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

http://onsemi.com

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