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MP3V5004DP

Integrated Silicon Pressure Sensor, On-Chip Signal Conditioned, Temperature Compensated and Calibrated(MP3V5004G Series 0 to 3.92 kPa (0 to 400 mm H2 O) 0.6 to 3.0 V Output)

Freescale Semiconductor 

Pressure

On-chip Temperature Compensation and Calibration

The performance over temperature is achieved by

integrating the shear-stress strain gauge, temperature

compensation, calibration and signal conditioning circuitry

onto a single monolithic chip.

Figure 2 illustrates the gauge configuration in the basic

chip carrier (Case 482A). A fluorosilicone gel isolates the die

surface and wire bonds from the environment, while allowing

the pressure signal to be transmitted to the silicon diaphragm.

The MP3V5004G series sensor operating characteristics

are based on the use of dry air as pressure media. Media,

other than dry air, may have adverse effects on sensor

performance and long-term reliability. Internal reliability and

qualification test for dry air, and other media, are available

from the factory. Contact the factory for information regarding

media tolerance in your application.

Figure 3 shows the recommended decoupling circuit for

interfacing the output of the MP3V5004G to the A/D input of

the microprocessor or microcontroller. Proper decoupling of

the power supply is recommended.

Figure 4 shows the sensor output signal relative to

pressure input. Typical, minimum and maximum output

curves are shown for operation over a temperature range of

10°C to 60°C using the decoupling circuit shown in Figure 3

The output will saturate outside of the specified pressure

range.

Fluorosilicone

Gel Die Coat

Wire

Bond

Lead

Frame

Differential Sensing

Element

Die

P1

Stainless

Steel Cap

Thermoplas-

tic

P2

Die Bond

1.0 μF

+3 V

Vout

Vs

IPS

0.01 μF

GND

OUTPUT

470 pF

Figure 2. Cross Sectional Diagram SSOP (not to scale)

Figure 3. Recommended Power Supply Decoupling and

Output Filtering.

(For additional output filtering, please refer to Application

Note AN1646.)

3.0

TRANSFER FUNCTION:

Vout = VS*[(0.2*P) + 0.2] ± 2.5% VFSS

VS = 3.0 V ± 0.30 Vdc

TEMP = 10 to 60°C

2.0

1.0 Max

Typical

Min

0.6

2 kPa

200 mm H2O

4 kPa

400 mm H2O

Figure 4. Output vs. Pressure Differential at ±2.5% VFSS

(See Note 5 in Operating Characteristics table)

MP3V5004G

4

Sensors

Freescale Semiconductor

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