MJ3040 Ver la hoja de datos (PDF) - Inchange Semiconductor

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MJ3040

Silicon NPN Darlingtion Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlingtion Power Transistor

MJ3040

DESCRIPTION

·Built-in Base-Emitter Shunt Resistors

·High DC current gain-

hFE = 100 (Min) @ IC =2.5A

·Collector-Emitter Sustaining Voltage-

VCEO(SUS)=300V(Min)

APPLICATIONS

·Developed for line operated amplifier, series pass and

Switching regulator applications.

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

400

V

VCEO Collector-Emitter Voltage

300

V

VEBO Emitter-Base Voltage

8

V

IC

Collector Current -Continuous

10

A

PC

Collector Power Dissipation@TC=25℃ 175

W

TJ

Junction Temperature

Tstg

Storage Temperature

200

℃

-55~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX

1.0

UNIT

℃/W

isc Website：www.iscsemi.cn

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