SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
3
2
ts
10 1
7
5
4
3
2
tf
10 0
7
5
4
3
3
VCC=200V
IB1=2A
IC=600A
Tj=25°C
Tj=125°C
4 5 7 100 2
3 45
7 101
23
BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA
10 4
7
5
3
2
tw=100µs
10 3
7
5
3
2
10 2
7
5
3
2 TC =25°C
10 1 NON–REPETITIVE
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 710 3
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10 0 2 3 4 5 710 1 2 3
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
10 –3 2 3 4 5 710 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM600HD-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA
2000
1800
Tj=125°C
1600
1400
1200
1000
800
–IB2=4A
6A
600
400
200
0
0 100 200 300 400 500
COLLECTOR-EMITTER VOLTAGE VCE (V)
DERATING FACTOR OF F. B. S. O. A.
100
90
80
70
60
50
40
30
20
10
0
0
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
20 40 60 80 100 120 140 160
CASE TEMPERATURE TC (°C)
Feb.1999