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MAC12SMG

Sensitive Gate Triacs Silicon Bidirectional Thyristors

ON Semiconductor 

MAC12SM, MAC12SN

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Case

Junction−to−Ambient

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

Symbol

RqJC

RqJA

TL

Value

2.2

62.5

260

Unit

°C/W

°C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol Min Typ Max

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open)

ON CHARACTERISTICS

TJ = 25°C

TJ = 110°C

IDRM,

IRRM

−

− 0.01

−

−

2.0

Peak On-State Voltage (Note 2)

(ITM = ± 17 A)

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

VTM

−

− 1.85

IGT

−

1.5 5.0

−

2.5 5.0

−

2.7 5.0

Holding Current

(VD = 12 V, Gate Open, Initiating Current = ±200 mA)

Latching Current (VD = 12 V, IG = 5 mA)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

IH

−

2.5 10

IL

−

3.0 15

−

5.0 20

−

3.0 15

VGT

0.45 0.68 1.5

0.45 0.62 1.5

0.45 0.67 1.5

DYNAMIC CHARACTERISTICS

Critical Rate of Change of Commutating Current

(VD = 400 V, ITM = 3.5 A, Commutating dV/dt = 10 V/ms, Gate Open, TJ = 110°C,

f = 500 Hz, Snubber: Cs = 0.01 mf, Rs = 15 W)

(di/dt)c

8.0 10

−

Critical Rate of Rise of Off-State Voltage

(VD = 67% VDRM, Exponential Waveform, RGK = 1 KW, TJ = 110°C)

Repetitive Critical Rate of Rise of On-State Current

IPK = 50 A; PW = 40 msec; diG/dt = 1 A/msec; Igt = 100 mA; f = 60 Hz

2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

dV/dt

di/dt

15

40

−

−

−

10

Unit

mA

V

mA

mA

mA

V

A/ms

V/ms

A/ms

Symbol

VDRM

IDRM

VRRM

IRRM

VTM

IH

Voltage Current Characteristic of Triacs

(Bidirectional Device)

+ Current

Parameter

Peak Repetitive Forward Off State Voltage

Peak Forward Blocking Current

Peak Repetitive Reverse Off State Voltage

Peak Reverse Blocking Current

Maximum On State Voltage

Holding Current

IRRM at VRRM

on state

IH

Quadrant 3

MainTerminal 2 −

VTM

VTM

IH

off state

Quadrant 1

MainTerminal 2 +

+ Voltage

IDRM at VDRM

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