Switching Diodes
MA3X198 (MA198)
Silicon epitaxial planar type
For wave detection
■ Features
/ • Two elements contained in one package, allowing high-density
e. mounting
e g • Soft recovery characteristic (trr = 100 ns)
nc d cle sta ■ Absolute Maximum Ratings Ta = 25°C
lifecy Parameter
Symbol Rating
Unit
Reverse voltage
VR
40
V
a e ct Repetitive peak reverse voltage VRRM
40
V
du Forward current Single
IF(AV)
100
mA
n u ro (Average)
Series
75
te tin ur P . Repetitive peak Single
IFRM
225
mA
g fo pe tion forward current
Series
170
in ty a Non-repetitive peak Single
IFSM
500
mA
w e d rm forward surge current* Series
325
in n llo nc pe pe fo Junction temperature
fo na ty ty t in Storage temperature
a o des inte nce ued pe tes Note) *: t = 1 s
Tj
150
°C
Tstg
−55 to +150
°C
■ Package
• Code
Mini3-G1
• Pin Name
1: Anode 1
2: Cathode 2
3: Cathode 1, Anode 2
■ Marking Symbol: M2F
■ Internal Connection
3
1
2
c d inclued maintenacontinued tyout lat/sc/en ■ Electrical Characteristics Ta = 25°C ± 3°C
M is tinue lan ma dis tin b e Parameter
Symbol
Conditions
Min Typ Max Unit
a .n Forward voltage
on p ned iscon URLsonic Reverse current
isc pla d ing na Terminal capacitance
VF1
IF = 100 µA
VF2
IF = 100 mA
IR
VR = 40 V
Ct
VR = 6 V, f = 1 MHz
0.65
0.72
V
1.2
V
10
nA
1.0 2.0
pF
Dnce/D follow ://pa Reverse recovery time*
trr
IF = 10 mA, VR = 6 V
Irr = 0.1 IR, RL = 100 Ω
100
ns
a it ttp Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
n is h 2. Absolute frequency of input and output is 10 MHz.
inte e v 3. *: trr measurement circuit
a s Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
M lea tr
tp
Pt
10%
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
Ri = 50 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: December 2007
SKF00041EED
1