Q67100-Q850 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

fabricante

Q67100-Q850

512kx8-Bit Dynamic RAM

Infineon Technologies 

HYB 514800BJ -60/-70/-80

512k x 8 DRAM

AC Characteristics (cont’d)4)

TA = 0 to 70 ˚C; VCC = 5 V ± 10 %; tT = 5 ns

Parameter

Symbol

-60

min. max.

RAS to CAS

delay time 11)

tRCD

20

40

RAS to column

address delay

time 12)

tRAD

15

30

CAS to RAS

tCRP

5

–

precharge time

CAS precharge time tCP

10

–

Row address setup tASR

0

–

time

Row address hold tRAH

10

–

time

Column address

tASC

0

–

setup time

Column address hold tCAH

15

–

time

Column address to tRAL

30

–

RAS lead time

Read command

tRCS

0

–

setup time

Read command hold tRCH

0

–

time 8)

Read command hold tRRH

0

–

time ref. to RAS 8)

Write command hold tWCH

10

–

time

Write command hold tWCR

50

–

time ref. to RAS

Write command

tWP

10

–

pulse width

Write command to tRWL

20

–

RAS lead time

Write command to tCWL

20

–

CAS lead time

Data setup time 9)

tDS

0

–

Limit Values

-70

min. max.

20

50

min.

20

-80

max.

60

15

35

15

40

5

–

10

–

0

–

10

–

0

–

15

–

35

–

0

–

0

–

0

–

15

–

55

–

15

–

20

–

20

–

0

–

10

–

10

–

0

–

10

–

0

–

15

–

40

–

0

–

0

–

0

–

15

–

60

–

15

–

20

–

20

–

0

–

Unit

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

Semiconductor Group

131

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