L6227Q Ver la hoja de datos (PDF) - STMicroelectronics
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L6227Q Datasheet PDF : 27 Pages
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L6227Q
3
Electrical characteristics
Electrical characteristics
Table 5. Electrical characteristics (TA = 25 °C, Vs = 48 V, unless otherwise specified)
Symbol
Parameter
Test condition
Min Typ Max Unit
VSth(ON) Turn-on threshold
VSth(OFF) Turn-off threshold
IS
Quiescent supply current
TJ(OFF) Thermal shutdown temperature
Output DMOS transistors
All Bridges OFF;
TJ = -25 °C to 125 °C (1)
5.8 6.3 6.8 V
5 5.5 6 V
5 10 mA
165
°C
RDS(on)
High-side + low-side switch ON
resistance
IDSS Leakage current
TJ = 25 ° C
TJ =125 ° C (1)
EN = Low; OUT = VS
EN = Low; OUT = GND
1.47 1.69 Ω
2.35 2.7 Ω
2 mA
-0.3
mA
Source drain diodes
VSD Forward ON voltage
trr
Reverse recovery time
tfr
Forward recovery time
Logic input
ISD = 1.4 A, EN = LOW
If = 1.4 A
1.15 1.3 V
300
ns
200
ns
VIL
VIH
IIL
IIH
Vth(ON)
Vth(OFF)
Vth(HYS)
Low level logic input voltage
High level logic input voltage
Low level logic input current
High level logic input current
Turn-on input threshold
Turn-off input threshold
Input threshold hysteresis
Switching characteristics
tD(on)EN Enable to out turn ON delay time (2)
tD(on)IN
tRISE
tD(off)EN
tD(off)IN
tFALL
tdt
fCP
Input to out turn ON delay time
Output rise time(2)
Enable to out turn OFF delay time (2)
Input to out turn OFF delay time
Output fall time (2)
Dead time protection
Charge pump frequency
GND logic input voltage
7 V logic input voltage
ILOAD =1.4 A, resistive load
ILOAD =1.4 A, resistive load
(dead time included)
ILOAD =1.4 A, resistive load
ILOAD =1.4 A, resistive load
ILOAD =1.4 A, resistive load
ILOAD =1.4 A, resistive load
-25 °C < TJ < 125 °C
-0.3
0.8 V
2
7V
-10
µA
10 µA
1.8 2.0 V
0.8 1.3
V
0.25 0.5
V
500
800 ns
1.9
µs
40
250 ns
500 800 1000 ns
500 800 1000 ns
40
250 ns
0.5 1
µs
0.6 1 MHz
7/27
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