KU024N06P
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
SYMBOL
TEST CONDITION
BVDSS
ID=250μA, VGS=0V
ΔBVDSS/ΔTj ID=5mA, Referenced to 25℃
IDSS
VDS=60V, VGS=0V,
Vth
VDS=VGS, ID=250μA
IGSS
VGS=±20V, VDS=0V
RDS(ON)
VGS=10V, ID=80A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=48V, ID=80A
VGS=10V
(Note4,5)
VDD=30V
ID=80A
RG=25Ω
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD
IS=80A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IS=80A, VGS=0V,
Qrr
dIs/dt=300A/μs
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =120uH, IS=100A, VDD=48V, RG=25Ω, Starting Tj=25℃.
Note 3) IS≤80A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
60
-
-
V
-
0.06
-
V/℃
-
-
10
uA
2.0
-
4.0
V
-
- ±100 nA
-
2.1
2.4 mΩ
-
200
-
-
40
-
nC
-
70
-
-
170
-
-
300
-
ns
-
550
-
-
280
-
- 11,000 -
-
1,400
-
pF
-
700
-
-
-
137
A
-
-
548
-
-
1.4
V
-
90
-
ns
-
0.5
-
uC
2012. 5. 14
Revision No : 0
2/7