Typical Characteristics
2.0
IB = 200mA
1.8
IB = 180mA
IB = 160mA
IB = 140mA
1.6
IB = 120mA
IB = 100mA
1.4
IB = 80mA
1.2
IB = 60mA
1.0
IB = 40mA
0.8
0.6
IB = 20mA
0.4
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
1
VBE(sat)
IC = 5 IB
0.1
VCE(sat)
0.01
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
f = 1MHz
IE = 0
10
1
1
10
100
1000
VCB[V], COLLECTOR BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2000 Fairchild Semiconductor International
1000
100
VCE = 5V
10
1
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
6.0
5.5
VCE = 5V
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitte On Voltage
100
VCE = 10V
fREF = 10MHz
10
1
0.1
0.01
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
Rev. A, February 2000