KM68512B Ver la hoja de datos (PDF) - Samsung
Número de pieza
componentes Descripción
fabricante
KM68512B Datasheet PDF : 9 Pages
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KM68512B Family
Advance
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS 1)
Item
Symbol
Supply voltage
Vcc
Ground
Vss
Input high voltage
VIH
Input low voltage
VIL
Note
1. Commercial Product : TA=0 to 70°C, unless otherwise specified
Industrial Product : TA=-40 to 85°C, unless otherwise specified
2. Overshoot : VCC+3.0V in case of pulse width≤30ns
3. Undershoot : -3.0V in case of pulse width≤30ns
4. Overshoot and undershoot is sampled, not 100% tested
CAPACITANCE 1)(f=1MHz, TA=25°C)
Min
4.5
0
2.2
-0.53)
Typ
Max
Unit
5.0
5.5
V
0
0
V
-
Vcc+0.5V2)
V
-
0.8
V
Item
Symbol
Test Condition
Min
Input capacitance
CIN
VIN=0V
-
Input/Output capacitance
CIO
VIO=0V
-
1. Capacitance is sampled, not 100% tested
Max
6
8
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Operating power supply
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current (CMOS)
1. Industrial product = 15µA
Symbol
Test Conditions
ILI VIN=Vss to Vcc
ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc
ICC IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIL or VIH, Read
ICC1
Cycle time=1§Á, 100% duty, IIO=0mA
CS1≤0.2V, CS2≥VCC-0.2V, VIN≤0.2V or VIN≥Vcc -0.2V
Read
Write
ICC2 Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIL or VIH
VOL IOL=2.1mA
VOH IOH=-1.0mA
ISB CS1=VIH, CS2=VIL, Other inputs =VIL or VIH
ISB1 CS1≥Vcc-0.2V, CS2≥Vcc-0.2V or CS2≤0.2V
Min Typ Max Unit
-1 - 1 µA
-1 - 1 µA
- 7 10 mA
- - 5 mA
- - 30 mA
- - 60 mA
- - 0.4 V
2.4 - - V
- - 3 mA
-
1 101) µA
4
Revision 0.0
January 1998
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