K4S64323LH Ver la hoja de datos (PDF) - Samsung

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componentes Descripción

fabricante

K4S64323LH

512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Samsung 

K4S64323LH - F(H)E/N/G/C/L/F

Mobile-SDRAM

AC OPERATING TEST CONDITIONS(VDD = 2.5V ± 0.2V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial)

Parameter

Value

Unit

AC input levels (Vih/Vil)

0.9 x VDDQ / 0.2

V

Input timing measurement reference level

0.5 x VDDQ

V

Input rise and fall time

tr/tf = 1/1

ns

Output timing measurement reference level

0.5 x VDDQ

V

Output load condition

See Figure 2

Output

500Ω

VDDQ

500Ω

VOH (DC) = VDDQ - 0.2V, IOH = -0.1mA

VOL (DC) = 0.2V, IOL = 0.1mA

30pF

Output

Figure 1. DC Output Load Circuit

Z0=50Ω

Vtt=0.5 x VDDQ

50Ω

30pF

Figure 2. AC Output Load Circuit

February 2004

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