K4E640412E-TI60 Ver la hoja de datos (PDF) - Samsung

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componentes Descripción

fabricante

K4E640412E-TI60

16M x 4bit CMOS Dynamic RAM with Extended Data Out

Samsung 

Industrial Temperature

K4E660412E,K4E640412E

HIDDEN REFRESH CYCLE ( WRITE )

NOTE : DOUT = OPEN

CMOS DRAM

VIH -

RAS

VIL -

VIH -

CAS

VIL -

VIH -

A

VIL -

VIH -

W

VIL -

VIH -

OE

VIL -

DQ0 ~ DQ3(7)

VIH -

VIL -

tCRP

tRC

tRAS

tR P

tRC

tR P

tR A S

tRCD

tRSH

tCHR

tASR

tRAD

tRAH

tASC

ROW

ADDRESS

tRAL

tCAH

COLUMN

ADDRESS

tW C S

tW C H

tWP

tWRH

tWRP

tDS

tDH

DATA-IN

Don′t care

Undefined

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