IRHM7460SE
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage 500
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
2.5
gfs
Forward Transconductance
6.0
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Typ Max Units
V
0.66 V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
0.32
0.36
4.5
50
250
100
-100
180
30
95
29
93
90
59
6.8
3500
730
260
Ω
V
S( )
µA
nA
nC
ns
VGS = 12V, ID = 11.7A ➃
VGS = 12V, ID = 18A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 11.7A ➃
VDS= 400V ,VGS=0V
VDS = 400V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 18A
VDS = 250V
VDD =250V, ID =18A,
VGS =12V, RG = 2.35Ω
nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
VGS = 0V, VDS = 25V
pF
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
Continuous Source Current (Body Diode) 18
A
ISM Pulse Source Current (Body Diode) ➀
72
Test Conditions
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
1.8 V
800 nS
16 µC
Tj = 25°C, IS = 18A, VGS = 0V ➃
Tj = 25°C, IF = 18A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
0.50
0.21 °C/W
48
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com