IS61LV25616AL Ver la hoja de datos (PDF) - Integrated Silicon Solution

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IS61LV25616AL

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

Integrated Silicon Solution 

IS61LV25616AL

DATA RETENTION SWITCHING CHARACTERISTICS  (LL)

Symbol

Vdr

Idr

Parameter

Vdd for Data Retention

Data Retention Current

Test Condition

See Data Retention Waveform

Vdd = 2.0V, CE ≥ Vdd – 0.2V

tsdr

Data Retention Setup Time See Data Retention Waveform

trdr

Recovery Time

See Data Retention Waveform

Note 1: Typical values are measured at Vdd = 3.0V, Ta = 25oC and not 100% tested.

Options

Com.

Ind.

Min.

Typ.(1) Max. Unit

2.0

—

3.6 V

—

5

10 mA

—

—

15

0

—

— ns

trc

—

— ns

DATA RETENTION WAVEFORM (CE Controlled)

VDD

1.65V

1.4V

VDR

CE

GND

tSDR

Data Retention Mode

tRDR

CE ≥ VDD - 0.2V

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

11

Rev. F

12/15/2011

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